Effect of H on Si molecular-beam epitaxy
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چکیده
In Si crystal growth by molecular-beam epitaxy (MBE) at low temperatures there is known to be an epitaxial thickness: an initially crystalline regime before the deposited film becomes amorphous. The predominant impurity in MBE is hydrogen, but the role of background H in low-temperature MBE has not previously been assessed. Here the effect of deliberate dosing of the Si surface with atomic H during low-T growth is studied. The epitaxial thickness is shown to be sensitive to very small additional H fluxes ( =10-s Torr, i.e., an increase in H only marginally above ambient). With further increases in dose rate, the epitaxial thickness decreases as h+=hc--k(ln Pn). Using secondary-ion-mass pectrometry data on the segregated H at the interface, we argue that breakdown in epitaxy is not caused directly by the surface concentration of adsorbed impurities. It is deduced that very small concentrations of H may influence the Si surface diffusion rate. The possible effect of background H adsorption on previous experiments on Si steps and surface diffusion is discussed.
منابع مشابه
Effect of substrate growth temperatures on H diffusion in hydrogenated Si ∕ Si homoepitaxial structures grown by molecular beam epitaxy
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تاریخ انتشار 1999